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Que. 1  Thin film components are formed
A         are made of ceramic
B         are made of silk screening process
C         are formed by photomaskingand diffusion
D         can be made entirely from tantalum

Que. 2  In n-channel FET's are superior to p-channel FEY's because
A         they have lower switching time
B         they have lower pinchoff voltage
C         they have higher input impedance
D         mobility of charge carrier e- in n-channel FET is greater than 
the mobility of             charge carrier holes in p-channel FET

Que. 3     Which of the following device has the highest input impedance
A         npn transistor
B         JFET
C         UJT
D         MOSFET

Que. 4     the FET
A         has 3 pn-junction
B         use a forward bias junction
C         depands on the variation of a magnetic field for it's operation
D         depands on the variation of a reverse voltage it's operation

Que. 5     transistor in monolithic IC's
A         are made as separate wafer
B         use isolation junction as the collector junction
C         are similar to discrete planner transistor but have the collector 
constants on            the top surface
D         are identical with discrete planner transistor

Que. 6     encapsulation of a transistor is done to
A         provide mechanical reggedness
B         prevent photo electric effect
C         prevent electrical interference
D         to case heat radition

Que. 7     The most important factor groverning the cost of IC component is
A         the shape of the component
B         area occupied by the component
C         number of electrode connection
D         location of the component on the slice

Que. 8     Extremely low power dissipation and low cost per gate can be achieved 
in the following IC
A         ECL
B         CMOS
C         TTL
D         MOS

Que. 9     The following digital IC family can give maximum fan out
A         ECL
B         PMOS
C         CMOS
D         HTL

Que. 10     in SCR the turn off time
A         increases with increases of T
B         is independent of T
C         varies as 1/T
D         varies as 1/T^2

Author	Message
Neha Agarwal Groupie Joined: 04Jan2007 Online Status: Offline Posts: 59	Topic: Electronic Devices - GATE Sample qns..... Posted: 13Feb2007 at 5:26pm
	Que. 1 Thin film components are formed A are made of ceramic B are made of silk screening process C are formed by photomaskingand diffusion D can be made entirely from tantalum Que. 2 In n-channel FET's are superior to p-channel FEY's because A they have lower switching time B they have lower pinchoff voltage C they have higher input impedance D mobility of charge carrier e- in n-channel FET is greater than the mobility of charge carrier holes in p-channel FET Que. 3 Which of the following device has the highest input impedance A npn transistor B JFET C UJT D MOSFET Que. 4 the FET A has 3 pn-junction B use a forward bias junction C depands on the variation of a magnetic field for it's operation D depands on the variation of a reverse voltage it's operation Que. 5 transistor in monolithic IC's A are made as separate wafer B use isolation junction as the collector junction C are similar to discrete planner transistor but have the collector constants on the top surface D are identical with discrete planner transistor Que. 6 encapsulation of a transistor is done to A provide mechanical reggedness B prevent photo electric effect C prevent electrical interference D to case heat radition Que. 7 The most important factor groverning the cost of IC component is A the shape of the component B area occupied by the component C number of electrode connection D location of the component on the slice Que. 8 Extremely low power dissipation and low cost per gate can be achieved in the following IC A ECL B CMOS C TTL D MOS Que. 9 The following digital IC family can give maximum fan out A ECL B PMOS C CMOS D HTL Que. 10 in SCR the turn off time A increases with increases of T B is independent of T C varies as 1/T D varies as 1/T^2
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