Que. 1 Thin film components are formed
A are made of ceramic
B are made of silk screening process
C are formed by photomaskingand diffusion
D can be made entirely from tantalum
Que. 2 In n-channel FET's are superior to p-channel FEY's because
A they have lower switching time
B they have lower pinchoff voltage
C they have higher input impedance
D mobility of charge carrier e- in n-channel FET is greater than
the mobility of charge carrier holes in p-channel FET
Que. 3 Which of the following device has the highest input impedance
A npn transistor
B JFET
C UJT
D MOSFET
Que. 4 the FET
A has 3 pn-junction
B use a forward bias junction
C depands on the variation of a magnetic field for it's operation
D depands on the variation of a reverse voltage it's operation
Que. 5 transistor in monolithic IC's
A are made as separate wafer
B use isolation junction as the collector junction
C are similar to discrete planner transistor but have the collector
constants on the top surface
D are identical with discrete planner transistor
Que. 6 encapsulation of a transistor is done to
A provide mechanical reggedness
B prevent photo electric effect
C prevent electrical interference
D to case heat radition
Que. 7 The most important factor groverning the cost of IC component is
A the shape of the component
B area occupied by the component
C number of electrode connection
D location of the component on the slice
Que. 8 Extremely low power dissipation and low cost per gate can be achieved
in the following IC
A ECL
B CMOS
C TTL
D MOS
Que. 9 The following digital IC family can give maximum fan out
A ECL
B PMOS
C CMOS
D HTL
Que. 10 in SCR the turn off time
A increases with increases of T
B is independent of T
C varies as 1/T
D varies as 1/T^2
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