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Electronic Devices - GATE Sample qns.....

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Printed Date: 26Feb2025 at 10:45pm


Topic: Electronic Devices - GATE Sample qns.....
Posted By: Neha Agarwal
Subject: Electronic Devices - GATE Sample qns.....
Date Posted: 13Feb2007 at 5:30pm
   


Que. 1      The main advantage of TRAPATT  diode over IMPATT diode is it's
A         higher output
B         higher efficiency
C         lower noise
D         capability to operate at higher freq.

Que. 2     in an unbiased pn junction the junction current is equilibrum is
A         due to diffusion of majority carriers
B         due to diffusion of minority carriers
C         zero due to equal and opposite currents crossing the junction
D         zero because no charges cross the junction

Que. 3     In Ge diode the cutin voltage is about
A         0.2v
B         0.6v
C         1.1v
D         2v

Que. 4     In a pnp transistor operating in the active region the concentration of
minority            carriers holes in the n region at collector junction
J(e)   is
A         zero
B         thermal equilibrium value p(no) of emittor
C         thermal equilibrium concentration of holes in collector region
D         same as at J(e)

Que. 5     In the uniformly doped abrupt p-n junction, the doping level of the n-side
is four      times the dopinglevel of the p-side. the ratio of the deplation
layer widths is
A         0.25
B         0.5
C         1.0
D         2.0

Que. 6     An n-channel JFET has a pinch off voltage of Vp=-5v,Vds(max)=20v and
               (delta)(m)=2mA/V.The minimum 'ON' resistance is achieved
in the JFET for
A         V(gs)=-7v, V(ds)=0v
B         V(gs)=7v, V(ds)=0v
C         V(gs)=0v, V(ds)=20v
D         V(gs)=-7v, V(ds)=20v

Que. 7     The reverse saturation current of a solar cell is 10 and the light generated
short ckt current is I for 1 sun illuminated. the open ckt voltage of
the solar cell under one sun illumination is
A         KT/q  ln(1+I(L)/I(O))
B         q/KT  ln(1+I(L)/I(O))
C         KT ln(I(O)+I(L))
D         KT ln(I(L)-I(O))

Que. 8     The need of centre tap is eliminited in full wave_______ rectifier
A         vacuum tube
B         semiconductor
C         crystal diode
D         bridge

Que. 9     When a lossy capzcitance with a dielectric of permittivity e and conducitivity
o- operates at a freq. w, the loss tangent for the capacitor is given by
A         wo-/e
B         we/o-
C         o-/we
D         o-we

Que. 10     Micro-program is
A         The name of the source program in microcomputer
B         the set of instructions indicating the primitive operations in
a system
C         the general name of a MACRO'S in assembly language programming
D         the name of program of  very smallsize            


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