Que. 1 In industrial electronic control
A AC power system are always used
B IC's can be used with advantage in feedback control ckt
C we are simply conceened in establishing stable control with constant
load conditions
D use of IC's is not of consequence
Que. 2 An IC sence amplifier
A consists of a linear amplifier a voltage level detector and a
logic pulse forming ckt
B cannot practically made as a standerad probuct
C is a memory system
D consist of four seperate linear amplifier
Que. 3 Forbidden energy gap between valance band and conduction band is least
in the case of
A mica
B pure Si
C pure Ge
D impure Si
Que. 4 At 0degreeK Forbidden energy gap in Si is
A .785 eV
B 1.21 eV
C .72 eV
D 1.1 eV
Que. 5 acceptor impurity atoms in a result in new
A wide energy band
B narrow energy band
C discrete energy leval just below conduction leval
D discrete energy leval just above conduction leval
Que. 6 relative dielectric constant of Si is
A 12
B 14
C 16
D 20
Que. 7 Diffusion constant for free e- in Ge expressed in (cm^2/sec) is
A 13
B 40
C 34
D 99
Que. 8 when Ge is doped with penta valent impurity,the resulting material is
A p-type semiconductor
B n-type semiconductor
C intrisic semiconductor
D no longer semiconductor
Que. 9 microwave IC's
A have inferior performance
B are not possible to fabricate
C always use discreate components
D are initally being made as hybrid type on ceramic substrates
Que. 10 cost of monolithic IC is
A independent of the quantity produced
B roughly proportional to the area of ckt wafer
C proportional to the number of ckt elements
D increases with increase of quantity produced
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