One Stop GATE Forum: GATE–Sample Questions-Electronics Devices

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   Que. 1      A long speciman of p type semiconductor material
A         is +ively charged
B         is electrically neutral
C         has an electric field directed along its length
D         acts as a dipole
Que. 2     Acceptor impurity atoms in Si result in
A         increase forbidden gap
B         reduced forbidden gap
C         new discreate energy level slightly below conduction leval
D         new discreate energy leval slightly above conduction level
Que. 3     in any conductor hall voltage V(H)  is proportional to
A         B
B         B^2
C         1/B
D         1/B^2
Que. 4     In BJT with I(infinite)=1 micro.A, a=0.99,the value of I(CEO) is
A         0.01 micro.A
B         0.001 micro.A
C         1 micro.A
D         1000 micro.A
Que. 5     The current gain of a BJT is
A         g(m)*r(o)
B         g(m)/r(o)
C         g(m)*r(pi)
D         g(m)/r(pi)
Que. 6     The velocity of the holes in the n region at X=0
A         12*10^3 cm/sec
B         5*10^3 cm/sec
C         2*10^4 cm/sec
D         none of these
Que. 7     The spectral dencity of pink noise varies as
A         1/f^2
B         f^2
C         1/f
D         f
Que. 8     zener diode is used as a
A         current regulator
B         voltage booster
C         voltage regulator
D         power regulator
Que. 9     three phase half wave rectification,if the input frequency is 50hz then 
output      frequency is
A         100 hz
B         150hz
C         75hz
D         25hz
Que. 10     For getting low regulated voltages are used
A         zeners
B         SCR
C         transistor
D         chopper
Que. 11     thin film components are formed
A         are made of ceramic
B         are made of silk screening process
C         are formed by photomaskingand diffusion
D         can be made entirely from tantalum
Que. 12     in n-channel FET's are superior to p-channel FEY's because
A         they have lower switching time
B         they have lower pinchoff voltage
C         they have higher input impedance
D         mobility of charge carrier e- in n-channel FET is greater than 
the mobility of             charge carrier holes in p-channel FET
Que. 13     Which of the following device has the highest input impedance
A         npn transistor
B         JFET
C         UJT
D         MOSFET
Que. 14     the FET
A         has 3 pn-junction
B         use a forward bias junction
C         depands on the variation of a magnetic field for it's operation
D         depands on the variation of a reverse voltage it's operation
Que. 15     transistor in monolithic IC's
A         are made as separate wafer
B         use isolation junction as the collector junction
C         are similar to discrete planner transistor but have the collector 
constants on            the top surface
D         are identical with discrete planner transistor
Que. 16     encapsulation of a transistor is done to
A         provide mechanical reggedness
B         prevent photo electric effect
C         prevent electrical interference
D         to case heat radition
Que. 17     The most important factor groverning the cost of IC component is
A         the shape of the component
B         area occupied by the component
C         number of electrode connection
D         location of the component on the slice
Que. 18     Extremely low power dissipation and low cost per gate can be achieved 
in the following IC
A         ECL
B         CMOS
C         TTL
D         MOS
Que. 19     The following digital IC family can give maximum fan out
A         ECL
B         PMOS
C         CMOS
D         HTL
Que. 20     in SCR the turn off time
A         increases with increases of T
B         is independent of T
C         varies as 1/T
D         varies as 1/T^2
Que. 21     In industrial electronic control
A         AC power system are always used
B         IC's can be used with advantage in feedback control ckt
C         we are simply conceened in establishing stable control with constant 
load                   conditions
D         use of IC's is not of consequence
Que. 22     An IC sence amplifier
A         consists of a linear amplifier a voltage level detector and a 
logic pulse                   forming ckt
B         cannot practically made as a standerad probuct
C         is a memory system
D         consist of four seperate linear amplifier
Que. 23     Forbidden energy gap between valance band and conduction band is least 
in the case of
A         mica
B         pure Si
C         pure Ge
D         impure Si
Que. 24     At 0degreeK Forbidden energy gap in Si is
A         .785 eV
B         1.21 eV
C         .72 eV
D         1.1 eV
Que. 25     acceptor impurity atoms in a result in new
A         wide energy band
B         narrow energy band
C         discrete energy leval just below conduction leval
D         discrete energy leval just above conduction leval
Que. 26     relative dielectric constant of Si is
A         12
B         14
C         16
D         20
Que. 27     Diffusion constant for free e- in Ge expressed in (cm^2/sec) is
A         13
B         40
C         34
D         99
Que. 28     when Ge is doped with penta valent impurity,the resulting material is
A         p-type semiconductor
B         n-type semiconductor
C         intrisic semiconductor
D         no longer semiconductor
Que. 29     microwave IC's
A         have inferior performance
B         are not possible to fabricate
C         always use discreate components
D         are initally being made as hybrid type on ceramic substrates
Que. 30     cost of monolithic IC is
A         independent of the quantity produced
B         roughly proportional to the area of ckt wafer
C         proportional to the number of ckt elements
D         increases with increase of quantity produced
Que. 31     The main advantage of TRAPATT  diode over IMPATT diode is it's
A         higher output
B         higher efficiency
C         lower noise
D         capability to operate at higher freq.
Que. 32     in an unbiased pn junction the junction current is equilibrum is
A         due to diffusion of majority carriers
B         due to diffusion of minority carriers
C         zero due to equal and opposite currents crossing the junction
D         zero because no charges cross the junction
Que. 33     In Ge diode the cutin voltage is about
A         0.2v
B         0.6v
C         1.1v
D         2v
Que. 34     In a pnp transistor operating in the active region the concentration of 
minority            carriers holes in the n region at collector junction 
J(e)   is
A         zero
B         thermal equilibrium value p(no) of emittor
C         thermal equilibrium concentration of holes in collector region
D         same as at J(e)
Que. 35     In the uniformly doped abrupt p-n junction, the doping level of the n-side 
is four      times the dopinglevel of the p-side. the ratio of the deplation 
layer widths is
A         0.25
B         0.5
C         1.0
D         2.0
Que. 36     An n-channel JFET has a pinch off voltage of Vp=-5v,Vds(max)=20v and 
               (delta)(m)=2mA/V.The minimum 'ON' resistance is achieved 
in the JFET for
A         V(gs)=-7v, V(ds)=0v
B         V(gs)=7v, V(ds)=0v
C         V(gs)=0v, V(ds)=20v
D         V(gs)=-7v, V(ds)=20v
Que. 37     The reverse saturation current of a solar cell is 10 and the light generated 
short ckt current is I for 1 sun illuminated. the open ckt voltage of 
the solar cell under one sun illumination is
A         KT/q  ln(1+I(L)/I(O))
B         q/KT  ln(1+I(L)/I(O))
C         KT ln(I(O)+I(L))
D         KT ln(I(L)-I(O))
Que. 38     The need of centre tap is eliminited in full wave_______ rectifier
A         vacuum tube
B         semiconductor
C         crystal diode
D         bridge
Que. 39     When a lossy capzcitance with a dielectric of permittivity e and conducitivity 
o- operates at a freq. w, the loss tangent for the capacitor is given by
A         wo-/e
B         we/o-
C         o-/we
D         o-we
Que. 40     Micro-program is
A         The name of the source program in microcomputer
B         the set of instructions indicating the primitive operations in 
a system
C         the general name of a MACRO'S in assembly language programming
D         the name of program of  very smallsize

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aparna Groupie Joined: 30Apr2007 Online Status: Offline Posts: 70	Topic: GATE–Sample Questions-Electronics Devices Posted: 27Nov2007 at 2:46am
	Que. 1 A long speciman of p type semiconductor material A is +ively charged B is electrically neutral C has an electric field directed along its length D acts as a dipole Que. 2 Acceptor impurity atoms in Si result in A increase forbidden gap B reduced forbidden gap C new discreate energy level slightly below conduction leval D new discreate energy leval slightly above conduction level Que. 3 in any conductor hall voltage V(H) is proportional to A B B B^2 C 1/B D 1/B^2 Que. 4 In BJT with I(infinite)=1 micro.A, a=0.99,the value of I(CEO) is A 0.01 micro.A B 0.001 micro.A C 1 micro.A D 1000 micro.A Que. 5 The current gain of a BJT is A g(m)r(o) B g(m)/r(o) C g(m)r(pi) D g(m)/r(pi) Que. 6 The velocity of the holes in the n region at X=0 A 1210^3 cm/sec B 510^3 cm/sec C 210^4 cm/sec D none of these Que. 7 The spectral dencity of pink noise varies as A 1/f^2 B f^2 C 1/f D f Que. 8 zener diode is used as a A current regulator B voltage booster C voltage regulator D power regulator Que. 9 three phase half wave rectification,if the input frequency is 50hz then output frequency is A 100 hz B 150hz C 75hz D 25hz Que. 10 For getting low regulated voltages are used A zeners B SCR C transistor D chopper Que. 11 thin film components are formed A are made of ceramic B are made of silk screening process C are formed by photomaskingand diffusion D can be made entirely from tantalum Que. 12 in n-channel FET's are superior to p-channel FEY's because A they have lower switching time B they have lower pinchoff voltage C they have higher input impedance D mobility of charge carrier e- in n-channel FET is greater than the mobility of charge carrier holes in p-channel FET Que. 13 Which of the following device has the highest input impedance A npn transistor B JFET C UJT D MOSFET Que. 14 the FET A has 3 pn-junction B use a forward bias junction C depands on the variation of a magnetic field for it's operation D depands on the variation of a reverse voltage it's operation Que. 15 transistor in monolithic IC's A are made as separate wafer B use isolation junction as the collector junction C are similar to discrete planner transistor but have the collector constants on the top surface D are identical with discrete planner transistor Que. 16 encapsulation of a transistor is done to A provide mechanical reggedness B prevent photo electric effect C prevent electrical interference D to case heat radition Que. 17 The most important factor groverning the cost of IC component is A the shape of the component B area occupied by the component C number of electrode connection D location of the component on the slice Que. 18 Extremely low power dissipation and low cost per gate can be achieved in the following IC A ECL B CMOS C TTL D MOS Que. 19 The following digital IC family can give maximum fan out A ECL B PMOS C CMOS D HTL Que. 20 in SCR the turn off time A increases with increases of T B is independent of T C varies as 1/T D varies as 1/T^2 Que. 21 In industrial electronic control A AC power system are always used B IC's can be used with advantage in feedback control ckt C we are simply conceened in establishing stable control with constant load conditions D use of IC's is not of consequence Que. 22 An IC sence amplifier A consists of a linear amplifier a voltage level detector and a logic pulse forming ckt B cannot practically made as a standerad probuct C is a memory system D consist of four seperate linear amplifier Que. 23 Forbidden energy gap between valance band and conduction band is least in the case of A mica B pure Si C pure Ge D impure Si Que. 24 At 0degreeK Forbidden energy gap in Si is A .785 eV B 1.21 eV C .72 eV D 1.1 eV Que. 25 acceptor impurity atoms in a result in new A wide energy band B narrow energy band C discrete energy leval just below conduction leval D discrete energy leval just above conduction leval Que. 26 relative dielectric constant of Si is A 12 B 14 C 16 D 20 Que. 27 Diffusion constant for free e- in Ge expressed in (cm^2/sec) is A 13 B 40 C 34 D 99 Que. 28 when Ge is doped with penta valent impurity,the resulting material is A p-type semiconductor B n-type semiconductor C intrisic semiconductor D no longer semiconductor Que. 29 microwave IC's A have inferior performance B are not possible to fabricate C always use discreate components D are initally being made as hybrid type on ceramic substrates Que. 30 cost of monolithic IC is A independent of the quantity produced B roughly proportional to the area of ckt wafer C proportional to the number of ckt elements D increases with increase of quantity produced Que. 31 The main advantage of TRAPATT diode over IMPATT diode is it's A higher output B higher efficiency C lower noise D capability to operate at higher freq. Que. 32 in an unbiased pn junction the junction current is equilibrum is A due to diffusion of majority carriers B due to diffusion of minority carriers C zero due to equal and opposite currents crossing the junction D zero because no charges cross the junction Que. 33 In Ge diode the cutin voltage is about A 0.2v B 0.6v C 1.1v D 2v Que. 34 In a pnp transistor operating in the active region the concentration of minority carriers holes in the n region at collector junction J(e) is A zero B thermal equilibrium value p(no) of emittor C thermal equilibrium concentration of holes in collector region D same as at J(e) Que. 35 In the uniformly doped abrupt p-n junction, the doping level of the n-side is four times the dopinglevel of the p-side. the ratio of the deplation layer widths is A 0.25 B 0.5 C 1.0 D 2.0 Que. 36 An n-channel JFET has a pinch off voltage of Vp=-5v,Vds(max)=20v and (delta)(m)=2mA/V.The minimum 'ON' resistance is achieved in the JFET for A V(gs)=-7v, V(ds)=0v B V(gs)=7v, V(ds)=0v C V(gs)=0v, V(ds)=20v D V(gs)=-7v, V(ds)=20v Que. 37 The reverse saturation current of a solar cell is 10 and the light generated short ckt current is I for 1 sun illuminated. the open ckt voltage of the solar cell under one sun illumination is A KT/q ln(1+I(L)/I(O)) B q/KT ln(1+I(L)/I(O)) C KT ln(I(O)+I(L)) D KT ln(I(L)-I(O)) Que. 38 The need of centre tap is eliminited in full wave_______ rectifier A vacuum tube B semiconductor C crystal diode D bridge Que. 39 When a lossy capzcitance with a dielectric of permittivity e and conducitivity o- operates at a freq. w, the loss tangent for the capacitor is given by A wo-/e B we/o- C o-/we D o-we Que. 40 Micro-program is A The name of the source program in microcomputer B the set of instructions indicating the primitive operations in a system C the general name of a MACRO'S in assembly language programming D the name of program of very smallsize Post Resume:* Click here to Upload your Resume & Apply for Jobs

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