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Que. 1      A long speciman of p type semiconductor material
A         is +ively charged
B         is electrically neutral
C         has an electric field directed along its length
D         acts as a dipole

Que. 2     Acceptor impurity atoms in Si result in
A         increase forbidden gap
B         reduced forbidden gap
C         new discreate energy level slightly below conduction leval
D         new discreate energy leval slightly above conduction level

Que. 3     in any conductor hall voltage V(H)  is proportional to
A         B
B         B^2
C         1/B
D         1/B^2

Que. 4     In BJT with I(infinite)=1 micro.A, a=0.99,the value of I(CEO) is
A         0.01 micro.A
B         0.001 micro.A
C         1 micro.A
D         1000 micro.A

Que. 5     The current gain of a BJT is
A         g(m)*r(o)
B         g(m)/r(o)
C         g(m)*r(pi)
D         g(m)/r(pi)

Que. 6     The velocity of the holes in the n region at X=0
A         12*10^3 cm/sec
B         5*10^3 cm/sec
C         2*10^4 cm/sec
D         none of these

Que. 7     The spectral dencity of pink noise varies as
A         1/f^2
B         f^2
C         1/f
D         f

Que. 8     zener diode is used as a
A         current regulator
B         voltage booster
C         voltage regulator
D         power regulator

Que. 9     three phase half wave rectification,if the input frequency is 50hz then output      frequency is
A         100 hz
B         150hz
C         75hz
D         25hz

Que. 10     For getting low regulated voltages are used
A         zeners
B         SCR
C         transistor
D         chopper

Author	Message
Neha Agarwal Groupie Joined: 04Jan2007 Online Status: Offline Posts: 59	Topic: Electronic Devices - GATE Sample qns..... Posted: 13Feb2007 at 5:23pm
	Que. 1 A long speciman of p type semiconductor material A is +ively charged B is electrically neutral C has an electric field directed along its length D acts as a dipole Que. 2 Acceptor impurity atoms in Si result in A increase forbidden gap B reduced forbidden gap C new discreate energy level slightly below conduction leval D new discreate energy leval slightly above conduction level Que. 3 in any conductor hall voltage V(H) is proportional to A B B B^2 C 1/B D 1/B^2 Que. 4 In BJT with I(infinite)=1 micro.A, a=0.99,the value of I(CEO) is A 0.01 micro.A B 0.001 micro.A C 1 micro.A D 1000 micro.A Que. 5 The current gain of a BJT is A g(m)r(o) B g(m)/r(o) C g(m)r(pi) D g(m)/r(pi) Que. 6 The velocity of the holes in the n region at X=0 A 1210^3 cm/sec B 510^3 cm/sec C 2*10^4 cm/sec D none of these Que. 7 The spectral dencity of pink noise varies as A 1/f^2 B f^2 C 1/f D f Que. 8 zener diode is used as a A current regulator B voltage booster C voltage regulator D power regulator Que. 9 three phase half wave rectification,if the input frequency is 50hz then output frequency is A 100 hz B 150hz C 75hz D 25hz Que. 10 For getting low regulated voltages are used A zeners B SCR C transistor D chopper
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