One Stop GATE Forum: Electronic Devices

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Que. 1      In industrial electronic control
A         AC power system are always used
B         IC's can be used with advantage in feedback control ckt
C         we are simply conceened in establishing stable control with constant 
load                   conditions
D         use of IC's is not of consequence

Que. 2     An IC sence amplifier
A         consists of a linear amplifier a voltage level detector and a 
logic pulse                   forming ckt
B         cannot practically made as a standerad probuct
C         is a memory system
D         consist of four seperate linear amplifier

Que. 3     Forbidden energy gap between valance band and conduction band is least 
in the case of
A         mica
B         pure Si
C         pure Ge
D         impure Si

Que. 4     At 0degreeK Forbidden energy gap in Si is
A         .785 eV
B         1.21 eV
C         .72 eV
D         1.1 eV

Que. 5     acceptor impurity atoms in a result in new
A         wide energy band
B         narrow energy band
C         discrete energy leval just below conduction leval
D         discrete energy leval just above conduction leval

Que. 6     relative dielectric constant of Si is
A         12
B         14
C         16
D         20

Que. 7     Diffusion constant for free e- in Ge expressed in (cm^2/sec) is
A         13
B         40
C         34
D         99

Que. 8     when Ge is doped with penta valent impurity,the resulting material is
A         p-type semiconductor
B         n-type semiconductor
C         intrisic semiconductor
D         no longer semiconductor

Que. 9     microwave IC's
A         have inferior performance
B         are not possible to fabricate
C         always use discreate components
D         are initally being made as hybrid type on ceramic substrates

Que. 10     cost of monolithic IC is
A         independent of the quantity produced
B         roughly proportional to the area of ckt wafer
C         proportional to the number of ckt elements
D         increases with increase of quantity produced

Author	Message
Neha Agarwal Groupie Joined: 04Jan2007 Online Status: Offline Posts: 59	Topic: Electronic Devices - GATE Sample qns..... Posted: 13Feb2007 at 5:27pm
	Que. 1 In industrial electronic control A AC power system are always used B IC's can be used with advantage in feedback control ckt C we are simply conceened in establishing stable control with constant load conditions D use of IC's is not of consequence Que. 2 An IC sence amplifier A consists of a linear amplifier a voltage level detector and a logic pulse forming ckt B cannot practically made as a standerad probuct C is a memory system D consist of four seperate linear amplifier Que. 3 Forbidden energy gap between valance band and conduction band is least in the case of A mica B pure Si C pure Ge D impure Si Que. 4 At 0degreeK Forbidden energy gap in Si is A .785 eV B 1.21 eV C .72 eV D 1.1 eV Que. 5 acceptor impurity atoms in a result in new A wide energy band B narrow energy band C discrete energy leval just below conduction leval D discrete energy leval just above conduction leval Que. 6 relative dielectric constant of Si is A 12 B 14 C 16 D 20 Que. 7 Diffusion constant for free e- in Ge expressed in (cm^2/sec) is A 13 B 40 C 34 D 99 Que. 8 when Ge is doped with penta valent impurity,the resulting material is A p-type semiconductor B n-type semiconductor C intrisic semiconductor D no longer semiconductor Que. 9 microwave IC's A have inferior performance B are not possible to fabricate C always use discreate components D are initally being made as hybrid type on ceramic substrates Que. 10 cost of monolithic IC is A independent of the quantity produced B roughly proportional to the area of ckt wafer C proportional to the number of ckt elements D increases with increase of quantity produced
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